Modular FET model with distributed source configuration for single and double side source grounded MESFET

20 June 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (13) , 1128-1129
https://doi.org/10.1049/el:19910704

Abstract

A new approach for accurately modelling MESFETs and HEMTs up to the high millimetre-wave range is described. The use of a distributed source configuration allows the characterisation of both single side grounded (SSG) and double side grounded (DSG) FETs in the common source and also in the reverse channel circuit configuration. The model has been verified up to 40 GHz with excellent results. To our knowledge the effect of SSG has not been examined yet by any commercial CAD tool.

Keywords

COMMON SOURCE
40 GHZ
EHF
MM-WAVE DEVICES
SINGLE SIDE GROUNDED
MILLIMETRE-WAVE RANGE
MODULAR FET MODEL
MESFET
REVERSE CHANNEL CIRCUIT CONFIGURATION
DISTRIBUTED SOURCE CONFIGURATION
DOUBLE SIDE GROUNDED
HEMTS

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