Multifunctional photonic switching operation of 1500 nm Y-coupled cavity laser (YCCL) with 28 nm tuning capability

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Abstract
The authors present new results on extended electrical tuning, fast spatial switching, and optically controlled wavelength conversion characteristics for the recently developed InP-based Y-laser structure. The devices have a 80 nm thick bulk InGaAsP active layer and are completely grown by metalorganic vapor phase epitaxy. The facets at both ends of the chip are as-cleaved without antireflective coating. The addressable range for electrically controlled wavelength switching was extended to the record value of 28 nm. When operated as a lossless 1:2 optical space switch, fiber-to-fiber gain >0 dB, extinction ratio >50 dB and high speed operation up to 1 Gb/s were shown. Optically triggered tunable wavelength conversion including dynamic operation was also demonstrated.