Tuning of the valence-band structure of GaAs quantum wells by uniaxial stress

Publisher Website
Google Scholar
Abstract
Uniaxial stress induces striking effects on the polarized emission from the 2D Fermi sea in modulation-doped GaAs quantum well structures. These are interpreted within the effective-mass theory in terms of changes in valence-band mixing caused by modifications to the subband spacing and departure from tetragonal symmetry. Calculation of the electron-hole recombination together with a phenomenological approximation for the Fermi-sea shake-up processes successfully accounts for the luminescence spectra and their stress dependence.