Ruby laser pulse effects in ion implanted semiconductors

Publisher Website
Google Scholar
Abstract
The effects of Q‐switched ruby laser irradiations in ion implanted semiconductros will be reviewed with the main emphasis on the amorphous to single crystal transition. To compare with experiments, the heat equation is solved numerically to give the time evolution of temperature and melting as a function of the pulse energy density and time duration. The transition to single crystal occurs above a well defined threshold energy density at which the liquid layer wets the underlying single crystal substrate. The influence of the absorption coefficient in determining the threshold energy density is discussed for ruby and Nd wavelength irradiation in silicon samples with different amorphous thicknesses. Measurements in As and Cu implanted silicon indicate the occurrence of an As broadening and a Cu accumulation at the sample surface after ruby laser irradiations. These results can be explained in terms of matter transport in a liquid phase governed by diffusion and segregation coefficients. Local accumulation of impurities in the central region of craters formed during high energy density irradiation is found in Pb implanted Ge.

This publication has 0 references indexed in Scilit: