On the Compensation Mechanism of Amorphous Silicon Films: Study of Stability
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Activation of dopant in the p-layer of amorphous silicon solar cells under illuminationSolar Energy Materials and Solar Cells, 1996
- Kinetics of metastability in doped hydrogenated amorphous siliconPhilosophical Magazine Part B, 1994
- Thermally induced metastability in compensated and delta-doped amorphous siliconPhilosophical Magazine Part B, 1991
- Defects and disorder broadened band tails in compensated hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1991
- Electron and hole transport in compensated amorphous siliconPhilosophical Magazine Part B, 1990
- Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon filmsApplied Physics Letters, 1987
- Detailed investigation of doping in hydrogenated amorphous silicon and germaniumPhysical Review B, 1987
- Effects of dopants and defects on light-induced metastable states ina-Si:HPhysical Review B, 1985
- Localized states in compensatedPhysical Review B, 1984
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982