Dielectric breakdown and current conduction of oxide/nitride/oxide multi-layer structures

Publisher Website

1 January 1990

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/vlsit.1990.111037

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Conduction and charge trapping in polysilicon-silicon nitride-oxide-silicon structures under positive gate bias
IEEE Transactions on Electron Devices, 1988
IIIB-7 evidence of hole flow in silicon nitride for positive gate voltage
IEEE Transactions on Electron Devices, 1984