Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates
- 17 April 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (16) , 2182-2184
- https://doi.org/10.1063/1.126291
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass SubstratesJapanese Journal of Applied Physics, 1997
- Blue-Green Light-Emitting Diodes and Violet Laser DiodesMRS Bulletin, 1997
- Characterization of OMVPE-Grown AlGaInN HeterostructuresMRS Proceedings, 1996
- Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1995
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995
- Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting DevicesJournal of the Electrochemical Society, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994