Dielectric constants of Ta2O5 thin films deposited by r.f. sputtering
- 1 May 1996
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 277 (1-2) , 1-4
- https://doi.org/10.1016/0040-6090(95)08234-4
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Preparation of (111)-Oriented β-Ta2O5 Thin Films by Chemical Vapor Deposition Using Metalorganic PrecursorsJapanese Journal of Applied Physics, 1992
- Structures and properties of a Ta2O5 thin film deposited by dc magnetron reactive sputtering in a pure O2 atmosphereVacuum, 1990
- Defects and charge transport in stabilized α-Ta2O5Radiation Effects, 1983