RF Sputtering Crystal Growth and Spectroscopy of Nd Doped Y3Ga5O12 Substrate for Optical Amplifier

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Abstract
Optical amplifiers are very important devices for optical communication and information processing. Nd doped YGaG thin film waveguides which can be used for optical amplifiers were prepared on YAG substrates by rf sputtering. Single crystalline films with high quality were made at the substrate temperature T sub=750°C. The fluorescence spectrum of Nd ions with emission lines of width 20 cm-1 observed in the film coincided with that in YGaG bulk crystals. The amorphous films fabricated at T sub=650°C exhibited a broad emission band with half-width at maximum of 200 cm-1, which is ascribed to the different Nd ions with slightly different surroundings. Longitudinal pumping for excitation of Nd ions in the single crystalline films with thicknesses of about 1 µm was much more efficient than transverse pumping.