The diffusion of silicon in germanium
- 30 April 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (4) , 333-336
- https://doi.org/10.1016/0038-1101(81)90027-7
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Self-diffusion in silicon as probed by the ( p,γ) resonance broadening methodApplied Physics Letters, 1979
- Energy levels of A = 21–44 nuclei (VI)Nuclear Physics A, 1978
- Enhanced diffusion mechanismsRadiation Effects, 1978
- Ranges of some light ions measured by (p, γ) resonance broadeningRadiation Effects, 1977
- The application of the loop annealing technique to self diffusion studies in siliconJournal of Materials Science, 1974
- Method for Determining Silicon Diffusion Coefficients in Silicon and in Some Silicon CompoundsPhysical Review Letters, 1966
- Self Diffusion in Intrinsic SiliconPhysica Status Solidi (b), 1966
- Effect of Heavy Doping on the Self-Diffusion of GermaniumPhysical Review B, 1957
- Self-Diffusion in GermaniumPhysical Review B, 1956
- Electronic structure of primary solid solutions in metalsAdvances in Physics, 1954