Vacancy doping by off-stoichiometry in mercury chalcogenides

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Abstract
The influence of cation and anion vacancies on the transport properties of mercury telluride was investigated. The off-stoichiometry created vacancies were introduced by annealing the samples under controlled mercury vapor pressure. Transport property measurements between 1.6 and 300 K with magnetic field intensities, increasing up to0.6 Wb m−2, supplied the data to be analyzed using a two band model. The vacancies in turn introduced slow or heavy electrons and at high enough vacancy concentration, holes were also introduced. The mobilities, concentrations of the light and heavy electrons, or holes, and their influence on the electrical characteristics of mercury telluride could be quantitatively evaluated.

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