Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots
- 12 September 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (11) , 1388-1390
- https://doi.org/10.1063/1.112060
Abstract
The energy levels of nanometer size InGaAs quantum dots epitaxially grown on GaAs by the coherent islanding effect are probed using selectively excited photoluminescence (PL), and PL excitation. A lateral-confinement-induced interlevel spacing of ∼30 meV between the first two states can be deduced from the spectra.Keywords
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