1 W diffraction-limited-beam operation of resonant-optical-waveguide diode laser arrays at 0.98 μm

30 July 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (16) , 1543-1544
https://doi.org/10.1049/el:19920980

Abstract

Resonant arrays of antiguided diode lasers operating at 0.98 μm are reported for the first time. The devices use a strained-layer quantum-well InGaAs/AlGaAs structure. A diffraction-limited beam pattern is observed up to 1 W under pulsed operation and 0.25 W under CW operation. To the best of the authors' knowledge, this is the highest power in a diffraction-limited beam from diode laser arrays at 0.98 μm.

Keywords

0.98 MICRON
PULSED OPERATION
INGAAS-ALGAAS
0.25 W
CW OPERATION
STRAINED-LAYER QUANTUM-WELL
1 W
ANTIGUIDED DIODE LASERS
RESONANT-OPTICAL-WAVEGUIDE DIODE LASER ARRAYS
DIFFRACTION-LIMITED BEAM PATTERN

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