A quantum cascade laser based on an n-i-p-i superlattice
- 1 March 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 12 (3) , 263-265
- https://doi.org/10.1109/68.826908
Abstract
We demonstrate a quantum cascade laser with a novel injection concept. Periodic insertion of silicon- and beryllium-doped layers are used to control locally the internal electric field in the active region. This concept is demonstrated experimentally using an active region based on a periodic superlattice.Keywords
This publication has 10 references indexed in Scilit:
- Quantum cascade lasers based on superlattice active regions and n-i-p-i dopingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Low-threshold 7.3 μm quantum cascade lasers grown by gas-source molecular beam epitaxyApplied Physics Letters, 1999
- A multiwavelength semiconductor laserNature, 1998
- High performance interminiband quantum cascade lasers with graded superlatticesApplied Physics Letters, 1998
- High-power λ≈8 μm quantum cascade lasers with near optimum performanceApplied Physics Letters, 1998
- High-power inter-miniband lasing in intrinsic superlatticesApplied Physics Letters, 1998
- Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAsApplied Physics Letters, 1998
- High-Power Infrared (8-Micrometer Wavelength) Superlattice LasersScience, 1997
- High power mid-infrared (λ∼5 μm) quantum cascade lasers operating above room temperatureApplied Physics Letters, 1996
- Quantum Cascade LaserScience, 1994