Selective carrier removal using oxygen implantation in GaAs

12 November 1981

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 17 (23) , 873-874
https://doi.org/10.1049/el:19810609

Abstract

It has been reported that free-carrier compensation can be achieved using oxygen implantation and can remain stable even after annealing at temperatures up to 900°C. It is demonstrated that carrier removal rate is drastically dependent on the initial donor species. It is very likely that carrier removal in Si-doped layers takes place via formation of Si-O complexes.

Keywords

SI-DOPED LAYERS
O2 IMPLANTATION
SEMICONDUCTOR
SI-O COMPLEXES
900 DEGREES C ANNEALING
FREE-CARRIER COMPENSATION
GAAS
CARRIER REMOVAL

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