Reactive adsorption and diffusion of Ti on Si(001) by scanning tunneling microscopy
- 15 January 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (4) , 2380-2386
- https://doi.org/10.1103/physrevb.51.2380
Abstract
Scanning tunneling microscopy has been used to provide the atomic view of the reaction and diffusion of Ti and Si(001) at the monatomic adsorption stage. Two monatomic adsorption structures below and above 440 K have been found. The characteristic adsorption below 440 K is a Ti atom at the pedestal site on a dimer row. The high-temperature adsorption structure above 440 K is adsorption at a dimer vacancy induced by a dimer ejection process on the structural conversion path. The high-temperature adsorption structure shows one-dimensional hopping motion along a dimer row. Measurement of the hop rate gives the activation energy for diffusion and the prefactor of =1.8±0.1 eV and = , respectively. The growth features and the diffusion mechanism can be interpreted in terms of Ti-Si bond formation.
Keywords
This publication has 16 references indexed in Scilit:
- Real-time observations of vacancy diffusion on Si(001)-(2×1) by scanning tunneling microscopyPhysical Review Letters, 1993
- Direct measurement of diffusion by hot tunneling microscopy: Activation energy, anisotropy, and long jumpsPhysical Review Letters, 1992
- Inverse photoemission study of refractory metal/silicon interfacesSurface Science, 1991
- Anisotropy in surface migration of Si and Ge on Si(001)Surface Science, 1991
- Activation energy for surface diffusion of Si on Si(001): A scanning-tunneling-microscopy studyPhysical Review Letters, 1991
- Auger and electron-energy-loss spectroscopy study of interface formation in the Ti-Si systemPhysical Review B, 1990
- Silicide formation at the Ti/Si(111) interface: Room-temperature reaction and Schottky-barrier formationPhysical Review B, 1987
- Interface formation of W evaporated on Si(111) (7 × 7)Surface Science, 1986
- ELS study on the initial stage of Ti-silicide formation on Si(1 1 1) at room temperatureSolid State Communications, 1984
- Chemical reaction and Schottky-barrier formation at V/Si interfacesPhysical Review B, 1984