A Comparison of the Diffusion Behavior of Ion‐Implanted Sn, Ge, and Si in Gallium Arsenide
Open Access
- 1 November 1991
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 138 (11) , 3440-3449
- https://doi.org/10.1149/1.2085431
Abstract
No abstract availableThis publication has 0 references indexed in Scilit: