68.3: Invited Paper: Transparent Amorphous Oxide Semiconductors for High Performance TFT
- 1 May 2007
- journal article
- Published by Wiley in SID Symposium Digest of Technical Papers
- Vol. 38 (1) , 1830-1833
- https://doi.org/10.1889/1.2785692
Abstract
This paper briefly describes unique electron transport properties of transparent amorphous oxide semiconductors (TAOS) for TFT performance along with our material design concept. Emphasized is essential importance of indium ion for emergence of high field effect mobility on the basis of recent results on electronic structure calculation on amorphous InGaZnO4.This publication has 7 references indexed in Scilit:
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