Infrared spectra of Group III acceptors in silicon
- 1 January 1958
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 4 (1-2) , 148-153
- https://doi.org/10.1016/0022-3697(58)90205-1
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Absorption spectra of impurities in silicon—IJournal of Physics and Chemistry of Solids, 1956
- Concentration Effects on the Line Spectra of Bound Holes in SiliconPhysical Review B, 1956
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956
- Theory of Acceptor Levels in GermaniumPhysical Review B, 1955
- Optical Properties of Indium-Doped SiliconPhysical Review B, 1955
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955
- Theory of Donor and Acceptor States in Silicon and GermaniumPhysical Review B, 1954
- Infrared Measurements with a Cesium Iodide PrismJournal of the Optical Society of America, 1953
- Optical Investigations of Impurity Levels in SiliconThe Journal of Physical Chemistry, 1953