InAsP–Cs2O, A HIGH-EFFICIENCY INFRARED-PHOTOCATHODE
- 15 March 1970
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (6) , 245-246
- https://doi.org/10.1063/1.1653180
Abstract
The response of an InAs0.15P0.85–Cs2O photoemitter in the spectral range from 0.4 to 1.1μ is experimentally investigated. The 0.8% quantum efficiency obtained at 1.06μ represents more than an order of magnitude improvement in yield over existing S‐1 photosurfaces. The physical principle upon which this photoemitter is based is discussed in terms of a simple energy‐level diagram.Keywords
This publication has 1 reference indexed in Scilit:
- LOW-WORK-FUNCTION SURFACES FOR NEGATIVE-ELECTRON-AFFINITY PHOTOEMITTERSApplied Physics Letters, 1969