Evaluation of the effective hole masses in pseudomorphic compressively strained GaxIn1−xAs/InP quantum wells
- 3 July 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (1) , 67-69
- https://doi.org/10.1063/1.115509
Abstract
The valance band structure of metalorganic vapor phase epitaxy (MOVPE) grown strained GaxIn1−xAs/InP single quantum well structures is experimentally verified by the determination of the effective in‐plane hole masses. The masses are obtained by performing magnetotransport experiments. Mobilities up to 8700 cm2/V s for gallium content of x=0.3 were reached. The effective heavy hole masses of compressively strained GaInAs are drastically reduced compared to bulk material in excellent agreement to calculations using the k⋅p‐perturbation theory, whereas the masses of the uppermost valence band of tensile strained material appear to be rather high. Consequently, no experimental determination was possible in the latter case. A precise analysis of the Shubnikov–de Haas oscillation patterns of compressively strained quantum wells shows a spin splitting of the uppermost heavy hole band, containing two different effective masses.Keywords
This publication has 0 references indexed in Scilit: