I n s i t u strain measurements during the formation of platinum silicide films

Abstract
Using an in situ double optical beam technique, the evolution of the strain for the Pt–Si system was followed before, during, and after reaction. During initial heating and prior to reaction only a compressive thermal stress is observed whereupon reaction to form Pt2Si yields a compressive intrinsic stress. The mechanism for stress buildup and relaxation is elucidated and shown to be related to the relative motion of Pt and Si atoms during the respective processes.

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