Reduction of threshold current density in GaAs–Alx Ga1−x As heterostructure lasers by separate optical and carrier confinement
- 1 June 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (11) , 590-591
- https://doi.org/10.1063/1.1654518
Abstract
Heterostructure lasers in which the GaAs active layer is bounded on each side by successive layers of AlxGa1−xAs to confine the carriers and AlyGa1−yAs (y>x) to confine the light have been fabricated and studied. Room‐temperature threshold current densities as low as 690 ± 40 A/cm2 with differential quantum efficiencies of 32% have been obtained for 1‐mm cavity lengths.Keywords
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