Spin superlattice formation in ZnSe-based diluted magnetic semiconductor heterostructures

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Abstract
We have observed spin–polarized confinement of both electrons and holes in ZnSe-based single and multiple quantum well structures. The samples were grown by molecular beam epitaxy with 100 Å Zn0.99Fe0.01Se barriers and 100–200 Å ZnSe wells. In these systems, the band offsets are very small, so that the large spin–splitting of the diluted magnetic semiconductor levels dominates the alignment of both the conduction and valence bands, permitting magnetic field-tunable confinement. Magnetoreflectivity measurements show a pronounced asymmetry of the heavy hole spin–splitting, a signature of spin-dependent quantum confinement. The relative phase and near-unity intensity ratio of the ‘‘spin–up’’ and ‘‘spin–down’’ excitons confirm localization of spin–up carriers to the ZnSe wells and spin–down carriers to the ZnFeSe layers, producing a field-tunable ‘‘spin–superlattice.’’ These results will be compared to those obtained for higher magnetic ion concentrations in the barriers.

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