Submilliampere threshold current in 1.3 µmInAsP n -type modulation doped MQW lasers grown bygas source molecular beam epitaxy
- 6 August 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (16) , 1591-1593
- https://doi.org/10.1049/el:19981076
Abstract
A very low CW threshold current of 0.9 mA has been obtained in a 1.3 µm InAsP n-type modulation doped MQW laser at room temperature. This is the lowest threshold current ever reported for long-wavelength lasers using n-type modulation doping, and the lowest result grown by gas source molecular beam epitaxy in the long wavelength region.Keywords
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