L-band internally matched Si-MMIC low noise amplifier
- 1 January 1996
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 3 (0149645X) , 1225-1228 vol.3
- https://doi.org/10.1109/mwsym.1996.512157
Abstract
A Si-MMIC low noise amplifier (LNA), fabricated in conventional 0.8 /spl mu/m Bi-CMOS process, was developed. This LNA is monolithically integrated on a low resistive Si substrate with coplanar waveguide (CPW) type matching circuits. At 1.9 GHz, noise figure of 2.7 dB and gain of 10 dB were obtained at 2 V/2 mA d.c. supply.Keywords
This publication has 2 references indexed in Scilit:
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- Design and performance of low-current GaAs MMICs for L-band front-end applicationsIEEE Transactions on Microwave Theory and Techniques, 1991