Analysis of stability of amorphous silicon solar cells

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Abstract
The efficiency of amorphous silicon p‐i‐n solar cells strongly depends on the electronic properties of the intrinsic layer. Exposure to above band‐gap illumination results in the creation of metastable defects which appear as additional localized states in the mobility gap of amorphous silicon. These new defects reduce both carrier lifetimes and also modify the electric field distribution within a solar cell, resulting in a degradation of device performance with illumination time. In this paper we review the physics of amorphous silicon solar cells and show how they behave as a function of illumination time for varying cell thicknesses and illumination intensities for light entering these cells through both the n+ and p+ layers.

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