Wafer-mapping of hot carrier lifetime due to physical stress effects (MOSFET)
- 2 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Enhanced Gate Oxide Reliability through Fluorine Incorporation and the Influence of Polysilicon Process VariationsMRS Proceedings, 1991
- Hot-electron effects on short-channel MOSFETs determined by the piezoresistance effectIEEE Transactions on Electron Devices, 1988
- Piezoresistance in Quantized Conduction Bands in Silicon Inversion LayersJournal of Applied Physics, 1971