Low temperature electron trapping lifetimes and extrinsic photoconductivity in n-type silicon doped with shallow impurities
- 1 December 1961
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 22, 269-284
- https://doi.org/10.1016/0022-3697(61)90272-4
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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