Preparation and properties of V-substituted garnet films for ion-implanted 1.0-micron bubble devices with improved high-temperature propagation

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Abstract
The growth and properties of films of a novel composition, (SmLuCa)3 (FeVSi)5O12, for 4‐μm period Ion‐Implanted Propagation Pattern devices, are described. The use of vanadium substitution to lower 4πMs yields films with high Curie temperatures (Tc =512–524 °K). Small amounts of silicon are added for lattice matching of the films to the substrate and also to increase the Q value. The presence of vanadium in films was also found to substantially increase the Faraday rotation. The bubble size in these films is nearly constant in the temperature range of −50° to +150 °C. The films also have a high mobility and low dynamic coercivity. Preliminary results of bubble propagation in these films in the temperature range −50° to +160 °C are described. It is expected that because of a combination of the desirable magnetic properties, these films will find a widespread use in bubble devices requiring operations to higher temperatures.