Magnetic field dependence of the specific heat of heavily phosphorus doped silicon
- 31 December 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 32 (11) , 1147-1150
- https://doi.org/10.1016/0038-1098(79)90850-0
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Variable range hopping conduction in the lowest temperature regionSolid State Communications, 1979
- Electron correlation effects on Anderson localized statesSolid State Communications, 1978
- NMR Study on Electronic States in Phosphorus Doped SiliconJournal of the Physics Society Japan, 1978
- Magnetic Behavior of anAmorphous AntiferromagnetPhysical Review Letters, 1978
- Specific heat study of heavily P doped SiSolid State Communications, 1977
- Magnetic field dependence of the specific heat of heavily doped n-type siliconJournal of Magnetism and Magnetic Materials, 1975
- Specific-heat studies of heavily doped Si:PPhysical Review B, 1974
- Absolute Spin Susceptibilities and Other ESR Parameters of Heavily Doped-Type Silicon. II. A Unified TreatmentPhysical Review B, 1973
- Electron-Spin-Resonance Studies of Heavily Phosphorus-Doped SiliconPhysical Review B, 1971
- Electric Conduction in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1967