Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells

This publication has 17 references indexed in Scilit:

• Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure
  Japanese Journal of Applied Physics, 1999
• A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
  MRS Internet Journal of Nitride Semiconductor Research, 1999
• Comprehensive studies of light emission from GaN/InGaN/AlGaN single-quantum-well structures
  Journal of Crystal Growth, 1998
• Reduction of oscillator strength due to piezoelectric fields in ${\mathrm{G}\mathrm{a}\mathrm{N}/\mathrm{A}\mathrm{l}}_x{\mathrm{Ga}}_{1-x}\mathrm{N}$ quantum wells
  Physical Review B, 1998
• Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
  Japanese Journal of Applied Physics, 1997
• Recombination dynamics of localized excitons in ${\mathrm{In}}_{0.20}$${\mathrm{Ga}}_{0.80}$N-${\mathrm{In}}_{0.05}$${\mathrm{Ga}}_{0.95}$N multiple quantum wells
  Physical Review B, 1997
• Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
  Applied Physics Letters, 1996
• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
  Japanese Journal of Applied Physics, 1996
• Theoretical prediction of GaN lasing and temperature sensitivity
  Applied Physics Letters, 1995
• High-Power GaN P-N Junction Blue-Light-Emitting Diodes
  Japanese Journal of Applied Physics, 1991