Abstract
A process is described in which carbon furnace tubes are treated internally with a coating of sputtered tantalum. The method provides a three-fold increase in sensitivity over reported electrothermal methods for the determination of silicon. A practical limit of detection of 3 µg kg–1 of silicon has been determined and the method has been shown to be suitable for the determination of total silicon in water at low levels. Calculations suggest that the signal enhancement may be a kinetic rather than a thermodynamic effect.

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