A scheme of picosecond pulse shaping using gain saturation characteristics of semiconductor laser amplifiers
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 27 (9) , 2201-2210
- https://doi.org/10.1109/3.135179
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- High peak power picosecond pulse generation from AlGaAs external cavity mode-locked semiconductor laser and traveling-wave amplifierApplied Physics Letters, 1990
- Pulse energy gain saturation in subpico- and picosecond pulse amplification by a traveling-wave semiconductor laser amplifierIEEE Photonics Technology Letters, 1989
- Picosecond pulse amplification by electrically pulsed semiconductor optical amplifiersElectronics Letters, 1989
- Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiersIEEE Journal of Quantum Electronics, 1989
- Amplification of high repetition rate picosecond pulses using an InGaAsP traveling-wave optical amplifierApplied Physics Letters, 1988
- Distortionless picosecond pulse amplification and gain compression in a traveling-wave InGaAsP optical amplifierApplied Physics Letters, 1988
- Explanation and modelling of pulse compression and broadening in near-travelling-wave laser amplifiersElectronics Letters, 1988
- Gain switching of semiconductor injection lasersApplied Physics Letters, 1988
- High-power output over 200 mW of 1.3 µm GaInAsP VIPS lasersIEEE Journal of Quantum Electronics, 1987
- High-speed modulation and switching with gain in a GaAlAs traveling-wave optical amplifierApplied Physics Letters, 1984