Microstructures and Hydrogen Bonding Environments of Sputter-Deposited a-Si:H Films

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Abstract
Microstructures and correlated hydrogen bonding environments of a-Si:H films prepared by RF sputtering have been investigated by means of transmission electron microscope and Fourier transform infrared spectrometer. The uniform film formed at low gas pressure during the deposition shows only two strong IR peaks due to SiH configuration. These peaks decrease, and both the peaks due to SiH2 configuration and voids in the films increase consistently with increasing gas pressure, indicating that the uniform portion surrounded by the voids included only SiH constituent and that this SiH2 constituent is formed on the surface of the uniform portion.