Reactive Sputtering of NiCr Resistors With Closely AdjustableTemperature Coefficient of Resistance
Open Access
- 1 January 1977
- journal article
- research article
- Published by Wiley in Active and Passive Electronic Components
- Vol. 4 (3-4) , 133-137
- https://doi.org/10.1155/apec.4.133
Abstract
A process is described to obtain NiCr resistors with adjustable temperature coefficient of resistance (TCR) by reactive sputtering in an Ar-atmosphere with a small amount of oxygen in the range of 2% to 6%. As deposited the films show a TCR < −200 ppm/K. By heat treatment in air at a temperature of 350°C the TCR can be raised to values above −20 ppm/K. The time of heat treatment necessary to obtain a given TCR depends on the oxygen/argon ratio during sputtering. The long term stability is not affected by the choice of this ratio in a wide range.Keywords
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