Closed system LPE growth of CdxHg1−xTe
- 16 July 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 78 (1) , 125-131
- https://doi.org/10.1002/pssa.2210780114
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Surface defects of closed-system-grown CdxHg1–xTe epitaxial layersPhysica Status Solidi (a), 1983
- Liquid Phase Epitaxial Growth of ( Hg1 − x Cd x ) Te from Tellurium‐Rich Solutions Using a Closed Tube Tipping TechniqueJournal of the Electrochemical Society, 1981
- Effects of annealing on Hg0.79Cd0.21Te epilayersJournal of Applied Physics, 1980
- Liquidus isotherms, solidus lines and LPE growth in the Te-rich corner of the Hg-Cd-Te systemJournal of Electronic Materials, 1980
- The epitaxial growth of CdxHg1−xTe from stoichiometric melts. Crystallization and diffusionPhysica Status Solidi (a), 1980
- Liquid Phase Growth of HgCdTe Epitaxial LayersJournal of the Electrochemical Society, 1980
- Comparison of Hg0.6Cd0.4Te LPE layer growth from Te-, Hg-, and HgTe-rich solutionsIEEE Transactions on Electron Devices, 1980
- LPE growth of Hg0.60Cd0.40Te from Te-rich solutionApplied Physics Letters, 1979
- CdTe-CdxHg1−xTe HeterostructuresPhysica Status Solidi (a), 1975
- Growth and Properties of Hg1−xCdxTe Epitaxial LayersJournal of Applied Physics, 1969