A versatile, ion implanted bipolar transistor

1 January 1972

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1972.249288

Abstract

This paper describes the physical properties of arsenic and boron implanted silicon which have enabled bipolar transistors with hFEfrom 20 to > 1000 and with fTfrom 1.5 GHz to 7.7 GHz to be made. The process, which is capable of producing extremely uniform distributions of electrical parameters (e.g., hFE112 ± 1.2) is clearly extendable to a broad distribution of possible doping profiles and hence device characteristics.

Keywords

BIPOLAR TRANSISTORS
BORON
SILICON
PROTONS
OPTICAL NOISE
DOPING PROFILES
TAIL
TEMPERATURE
FREQUENCY
DESIGN ENGINEERING

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