Stressed Ge:Ga Photoconductor Technology
- 7 July 1986
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 588, 69-73
- https://doi.org/10.1117/12.951766
Abstract
The technology of stress cell systems to accommodate gallium doped germanium photoconductors is presented. The novel feature of the cell is the inclusion of a miniaturized spring calibrated in situ. Stress control measurements were made at 4.2 K by optical and electrical photoconductor characterization.© (1986) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.Keywords
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