X-ray, reflection high electron energy diffraction and X-ray photoelectron spectroscopy studies of InSe and γ-In2Se3 thin films grown by molecular beam deposition
- 1 January 1994
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 237 (1-2) , 291-296
- https://doi.org/10.1016/0040-6090(94)90275-5
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Growth conditions of films by molecular beam depositionMaterials Science and Engineering: B, 1989
- Growth conditions and structure of polycrystalline InSe thin filmsApplied Surface Science, 1988
- Electrical and Photovoltaic Properties of InxSe1−x Thin FilmsPhysica Status Solidi (a), 1987
- Indium selenide film formation by the double-source evaporation of indium and seleniumThin Solid Films, 1987
- Dependence of optical absorption of amorphous InSe films on temperature of heat treatmentSolid State Communications, 1985
- Photoconductivity and photovoltaic effect in indium selenideJournal of Applied Physics, 1983
- Medium infrared tunable down conversion of a YAG-pumped infrared dye laser in gallium selenideOptics Communications, 1979
- The crystal structure of tetraindium triselenideActa Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1973
- Mass spectrometric determination of dissociation energies of gaseous indium sulphides, selenides and telluridesTransactions of the Faraday Society, 1968
- Vapor pressures and phase equilibria in the GaAs systemJournal of Physics and Chemistry of Solids, 1967