Double-hump diffusion profiles of copper and nickel in germanium wafers yielding vacancy-related information
- 31 July 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (5) , 642-644
- https://doi.org/10.1063/1.127071
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Diffusion of gold in silicon during rapid thermal annealing: Effectiveness of the surface as a sink for self-interstitialsJournal of Applied Physics, 1998
- Diffusion of Nickel and Zinc in GermaniumDefect and Diffusion Forum, 1997
- Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditionsPhysical Review B, 1995
- A novel device for short-time diffusion annealingMeasurement Science and Technology, 1994
- Diffusion and solubility of copper, silver, and gold in germaniumPhysical Review B, 1991
- On Diffusion by the Dissociative Mechanism in the Case of a Finite Foreign‐Atom SourcePhysica Status Solidi (b), 1990
- Diffusion and solubility of copper in germaniumJournal of Applied Physics, 1985
- Deep level impurities in germaniumJournal of Physics and Chemistry of Solids, 1959
- Triple Acceptors in GermaniumPhysical Review B, 1957
- On the Behavior of Rapidly Diffusing Acceptors in GermaniumJournal of the Electrochemical Society, 1955