Lateral control of the bandgap in GaInAs/GaInAsP MQW structures using photoabsorption-induced disordering

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Abstract
The retention of high electrical and optical quality in GaInAs/GaInAsP multiquantum well laser material which has been bandgap widened by photoabsorption induced disordering (PAID) has been investigated using photoconducting measurements. On applying a reverse bias, Franz-Keldysh broadening of the exciton features is observed demonstrating that bandgap shifted modulators can be fabricated. Selective area disordering across the wafer using an Au reflection mask is also demonstrated.

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