A monolithic 14 bit D/A converter fabricated with a new trimming technique (DOT)
- 1 October 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 19 (5) , 802-807
- https://doi.org/10.1109/jssc.1984.1052224
Abstract
An electrical trimming technique for a heavily doped polysilicon resistor (DOT) has been successfully applied to the fabrication of a monolithic 14-bit D/A converter. The converter trimmed by DOT showed a nonlinearity error of less than 1/4 LSB, which means the converter substantially has 15-bit accuracy. Resistance post-trimming stability is greatly improved by introducing an excess trimming and restoration process in DOT, resulting in the achievement of a resistance stability of within /spl plusmn/0.01% of 100 years use at 100/spl deg/C.Keywords
This publication has 6 references indexed in Scilit:
- A physical mechanism of current-induced resistance decrease in heavily doped polysilicon resistorsIEEE Transactions on Electron Devices, 1982
- Electrical trimming of heavily doped polycrystalline silicon resistorsIEEE Transactions on Electron Devices, 1979
- A monolithic 12-bit D/A converterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- A high yield, second generation 10-bit monolithic DACPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1976
- An integrated circuit 12-bit D/A converterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975
- A precision trim technique for monolithic analog circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975