MBE growth and characterization of single crystal silicon oxides on (111) and (100)silicon

Publisher Website
Google Scholar
Abstract
Silicon molecular beam epitaxy has been used to prepare thin (500 Å) films of single crystal silicon oxide material, having from 25%–30% oxygen content, on (111) and (100)Si wafers. The films, called SiOz herein, were grown by evaporating silicon in the presence of oxygen at a wafer temperature around 675 °C. Single crystal films of pure silicon on top of (111)SiOz films have also been grown. The oxide material may be single crystal Si2O on (111)Si, but the ease of growing SiOz films on (100)Si indicates that perhaps oxygen incorporates in some other way. Auger data resembled AES data for amorphous SIPOS, while capacitance–voltage measurements possibly indicated a band gap step. This form of SiOz could be very significant if it can be used as a wide band gap semiconductor, compatible with silicon, and suitable as a wide band gap emitter for heterojunction bipolar transistors and ICs.

This publication has 0 references indexed in Scilit: