Conduction mechanisms in erbium silicide Schottky diodes
- 15 April 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (8) , 3873-3879
- https://doi.org/10.1063/1.352899
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- CorrigendumSolid-State Electronics, 1991
- A note on current-voltage measurements of n-type and p-type Pd2Si Schottky diodesSolid-State Electronics, 1991
- Evidence for multiple barrier heights in P-type PtSi Schottky-barrier diodes from I-V-T and photoresponse measurementsSolid-State Electronics, 1990
- Growth, characterization and electrical properties of epitaxial erbium silicideThin Solid Films, 1990
- Delocalization Effects at Metal-Semiconductor InterfacesPhysical Review Letters, 1988
- Correlation betweenpinning and development of metallic character in Ag overlayers on GaAs(110)Physical Review Letters, 1988
- The physical significance of the T0 anomalies in Schottky barriersSolid-State Electronics, 1977
- Forward current-voltage characteristics of Schottky barriers on n-type siliconSurface Science, 1969
- Theory of Surface StatesPhysical Review B, 1965
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947