Field effect studies in p-type InSb MIS structures
- 1 April 1980
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (4) , 2258-2260
- https://doi.org/10.1063/1.327852
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- On the interpretation of electrical measurements on the GaAs-MOS systemSolid-State Electronics, 1978
- Voltage readout of a temperature-controlled thin film thickness monitorJournal of Physics E: Scientific Instruments, 1977
- Anodic Oxidation of GaAs in Mixed Solutions of Glycol and WaterJournal of the Electrochemical Society, 1976
- Surface Potential and Surface State Density in Anodized GaAs MOS CapacitorsJapanese Journal of Applied Physics, 1976
- Slow states in InSb/SiOx thin film transistorsSolid-State Electronics, 1975
- Barrier-limited mobility in thin semiconductor filmsThin Solid Films, 1973
- Carrier mobility and field effect in thin indium antimode filmsThin Solid Films, 1972
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Theory of Photoconductivity in Semiconductor FilmsPhysical Review B, 1956
- The mean free path of electrons in metalsAdvances in Physics, 1952