Abstract
The radiation effects modeling reported here reflects a black-box approach to the desired behavior, and does not necessarily bear a direct relationship to the physics of the real processes taking place within the microcircuit when stressed by radiation environments. The gamma dose rate and neutron fluence effects modeling are only representative of radiation effects modeling which could be incorporated into the basic model; and in no sense should they be interpreted as being exhaustive of the radiation effects which need to be modeled, or of the intrinsic capabilities of the model to be easily modified.

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