Kinetics and mechanism of thermal oxidation of silicon with special emphasis on impurity effects
- 1 March 1969
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 30 (3) , 551-564
- https://doi.org/10.1016/0022-3697(69)90010-9
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
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