Optimum transit angles of millimeter-wave Si IMPATT diodes

1 June 1975

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 22 (6) , 363-365
https://doi.org/10.1109/T-ED.1975.18142

Abstract

Optimum transit angles for maximum output power in the millimeter-wave IMPATT diodes are calculated analytically by considering the carrier diffusion process through the space-charge region. It is found that the optimum transit angle decreases, as the space-charge layer width reduces. The theoretical results show satisfactory agreement with the previously published experimental results for Si p+-n-n+abrupt junction diodes.

Keywords

SPACE CHARGE REGION
OSCILLATIONS
ELECTRIC POWER
CURRENT DENSITY
MILLIMETER WAVE
TUNING
SPACE CHARGE
FREQUENCY
DIFFUSION PROCESS
POWER GENERATION
CHARGE CARRIER DENSITY
DIODES

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