New photoluminescence line-series spectra attributed to decay of multiexciton complexes bound to Li, B, and P centers in Si
- 15 January 1974
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 9 (2) , 723-736
- https://doi.org/10.1103/physrevb.9.723
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Condensation of non-equilibrium charge carriers in semiconductorsPhysica Status Solidi (a), 1972
- Valley-Orbit Splitting of the Indirect Free Exciton in SiliconPhysical Review B, 1970
- Valley-Orbit Splitting of Free Excitons? The Absorption Edge of SiPhysical Review Letters, 1970
- Recombination Kinetics of Excitonic Molecules and Free Excitons in Intrinsic SiliconPhysical Review B, 1970
- Valley-Orbit Splitting of the Indirect Free Exciton in SiliconPhysical Review B, 1969
- Absorption due to Bound Excitons in SiliconPhysical Review B, 1967
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and GermaniumPhysical Review B, 1967
- Experimental Observation of the Excitonic MoleculePhysical Review Letters, 1966
- Experimental Proof of the Existence of a New Electronic Complex in SiliconPhysical Review Letters, 1960
- Fine Structure in the Absorption-Edge Spectrum of SiPhysical Review B, 1958